Charge collection efficiency in heavily irradiated silicon diodes
نویسندگان
چکیده
منابع مشابه
Charge Transport in Non-Irradiated and Irradiated Silicon Diodes
A model describing the transport of charge carriers generated in silicon detectors (standard planar float zone and MESA diodes) by ionizing particles is presented. The current pulse response induced by and particles in non-irradiated detectors and detectors irradiated up to fluences 3 10 particles/cm is reproduced through this model: i) by adding a small n-type region 15 m deep on the p side fo...
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The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance-voltage (C-V) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector. Good agreeme...
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The charge collection e$ciency (CCE) of silicon detectors, previously irradiated with high neutron #uences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2]1014 n/cm2 is 100% at a bias voltage of 50 V. For 2]1015 n/cm2 the most probable signal collected for minimum ionising particles is 13 000 electrons, corresponding to 50% CCE, at a bias voltage of 250 V. Negligibl...
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Article history: Received 21 August 2011 Received in revised form 1 November 2011 Available online 14 December 2011
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 1998
ISSN: 0168-9002
DOI: 10.1016/s0168-9002(98)00469-0